advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 650v fast switching characteristic r ds(on) 1 simple drive requirement i d 10a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a 40 /w data & specifications subject to change without notice maximum thermal resistance, junction-ambient (pcb mount) 4 32 18 104 linear derating factor 0.8 AP2761S-A-HF -55 to 150 8 rating 650 + 30 10 4.4 201001051 halogen-free product 1 parameter parameter storage temperature range -55 to 150 g d s a p2761s is specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications.to-263 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. the to-263 package is widely preferred for commercial-industrial applications. the device is suited for switch mode power supplies, dc-ac converters and high current high speed switching circuits. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 650 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =3.5a - - 1 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =3.5a - 4.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =10a - 53 85 nc q gs gate-source charge v ds =520v - 10 - nc q gd gate-drain ("miller") charge v gs =10v - 15 - nc t d(on) turn-on delay time 3 v dd =320v - 16 - ns t r rise time i d =10a - 20 - ns t d(off) turn-off delay time r g =10 ? ,v gs =10v - 82 - ns t f fall time r d =32 ? -36- ns c iss input capacitance v gs =0v - 2750 4430 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =10a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =10a, v gs =0v, - 610 - ns q rr reverse recovery charge di/dt=100a/s - 8.64 - c notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =8a. 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 4.surface mounted on 1 in 2 copper pad of fr4 board AP2761S-A-HF
AP2761S-A-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3.5a v g =10v 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 4 8 12 16 20 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v 10v 7.0v 6.0v 5.0v 0 2 4 6 8 10 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 7.0v 6.0v 5.0v 0 2 4 6 8 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
ap2761s-a-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =330v v ds =410v v ds =520v operation in this area limited by r ds(on)
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